https://www.selleckchem.com/products/AG14361.html
Ga2O3-based solar-blind photodetectors have been extensively investigated for a wide range of applications. However, to date, a lot of research has focused on optimizing the epitaxial technique or constructing a heterojunction, and studies concerning surface passivation, a key technique in electronic and optoelectronic devices, are severely lacking. Here, we report an ultrasensitive metal-semiconductor-metal photodetector employing a β-Ga2O3 homojunction structure realized by low-energy surface fluorine plasma treatment, in which an ult
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