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A theoretically justified generalization of the segregation energy is imperative for obtaining these results, which are substantiated by comparison to experimental characterizations. Our findings demonstrate that the segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the position of the Fermi level (as in the case of Mn in GaN nanowires), which is, however, not always possible (as in the case of Co in ZnO nanowires). The analysis of the defect transition energies reveals that substitutional Mn and C
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