https://www.selleckchem.com/GSK-3.html
It has been demonstrated that defect engineering is an effective strategy to enhance the activity of materials. Herein, a polycrystalline GaN porous layer (PGP) with high catalytic activity was grown by self-assembly on GaN-coated sapphire substrate by using low-temperature (LT) MOCVD growth. Without doping, LT growth can significantly improve the activity and electrical conductivity of PGP, owing to the presence of rich N-vacancies (∼1020 cm-3). Identification of rich N-vacancies in the PGP material was realized by using atomically resolved STEM
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